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NEET Physics Chapter Wise Mock Test – Electronic devices

Contents

NEET Physics Chapter Wise Mock Test – Electronic devices

Question 1.
In the figure shown below, which of the diodes are forward biased?
NEET Physics Chapter Wise Mock Test - Electronic devices 1
(a) 1,2, 3
(b) 2, 4,5
(c) 1, 3, 4
(d) 2, 3, 4

Question 2.
A Zener diode is used for
(a) rectification
(b) modulation
(c) detection
(d) Voltage Regulation

Question 3.
In the figure, the input is across the terminals A and C and the output is across B and D. Then, the output is
NEET Physics Chapter Wise Mock Test - Electronic devices 2
(a) zero
(b) same as the input
(c) full wave rectified
(d) half wave rectified

Question 4.
In a good conductor of electricity, the type of bonding that exists is
(a) ionic
(b) van der Waal
(c) covalent
(d) metallic

Question 5.
In a junction diode, the holes are due to
(a) missing electron
(b) extra neutron
(c) protons
(d) All of these

Question 6.
If control grid is made negative, then the plate current will
(a) increase
(b) remain constant
(c) decrease
(d) cannot say from given data

Question 7.
If in a diode valve, the plate potential becomes double, then plate current will be
(a) 2√2 times
(b) 8 times
(c) 3√3 times
(d) 2 times

Question 8.
A p-n-p transistor is said to be in active region of operation, when
(a) both emitter junction and collector junction are forward biased
(b) both emitter junction and collector junction are reverse biased
(c) emitter junction is forward biased and collector junction is reverse biased
(d) emitter junction is reverse biased and collector junction is forward biased

Question 9.
A n-p-n transistor conducts, when
(a) collector is positive and emitter is at same potential as the base
(b) both collector and emitter are negative with respect to the base
(c) both collector and emitter are positive with respect to the base
(d) collector is positive and emitter is negative with respect to the base

Question 10.
To get an output Y =1 from the circuit shown, the inputs A ,B and C must be respectively
NEET Physics Chapter Wise Mock Test - Electronic devices 2
(a) 0,1,0
(b) 1,0,0
(c) 1,0,1
(d) 1,1,0

Question 11.
An AND gate is followed by a NOT gate in series. With two inputs A and B, the Boolean expression for the output Y will be
NEET Physics Chapter Wise Mock Test - Electronic devices 4

Question 12.
In the CB mode of a transistor, when the collector voltage is changed by 0.5 V. The collector current changes by 0.05 mA. The output resistance will be
(a) 10 kΩ
(b) 20 kΩ
(c) 5 kΩ
(d) 2.5 kΩ

Question 13.
The current gain of a transistor in common emitter mode is 49. The change in collector current and emitter current corresponding to the change in base current by 5.0 μA, will be
(a) 245 μA, 250 μA
(b) 240 μA, 235 μA
(c) 260 μA, 255 μA
(d) None of the above

Question 14.
The following configuration of gate is equivalent to
NEET Physics Chapter Wise Mock Test - Electronic devices 5
(a) NAND
(b) XOR
(c) OR
(d) None of these

Question 15.
The following circuit represents
NEET Physics Chapter Wise Mock Test - Electronic devices 6
(a) OR gate
(b) XOR gate
(c) AND gate
(d) NAND gate

Question 16.
The truth table is given below represents
NEET Physics Chapter Wise Mock Test - Electronic devices 7
(a) AND gate
(b) NOR gate
(c) OR gate
(d) NAND gate

Question 17.
If internal resistance of cell is negligible, then current flowing through the circuit is
NEET Physics Chapter Wise Mock Test - Electronic devices 8
(a) 3/50 A
(b) 5/50 A
(c) 4/50 A
(d) 2/50 A

Question 18.
For a transistor Ic/Ie = 0.96 the current gain common-emitter configuration is
(a) 6
(b) 12
(c) 24
(d) 48

Question 19.
For a given circuit of ideal p-n junction diode, which of the following is correct ?
NEET Physics Chapter Wise Mock Test - Electronic devices 9
(a) In forward biasing the voltage across R is V
(b) In reverse biasing the voltage across R isV
(c) In forward biasing the voltage across R is 2V
(d) In reverse biasing the voltage across R is 2V

Question 20.
Identify the operation performed by the circuit given below
NEET Physics Chapter Wise Mock Test - Electronic devices 10
(a) NOT
(b) AND
(c) OR
(d) NAND

Question 21.
In the following circuit, the output Y becomes zero for the inputs
NEET Physics Chapter Wise Mock Test - Electronic devices 11
(a) A=1, B=0, C=0
(b) A=0,B= 1,C=1
(c) A=0,B=0,C=0
(d) A=1, B=1, C=1

Direction (Q.NOs.22-27): In each of the following questions a statement of Assertion is given followed by a corresponding statement of Reason just below it. Of the statements mark the correct answer as
(a) If both Assertion and Reason are true and the Reason is the correct explanation of the Assertion
(b) If both Assertion and Reason are true but the Reason is not correct explanation of the Assertion
(c) If Assertion is true but Reason is false
(d) If both Assertion and Reason are false

Question 22.
Assertion (A): In a common emitter transistor amplifier, the input current is much less than the output current.
Reason (R): The common emitter transistor amplifier has very high input impedance.

Question 23.
Assertion (A): The logic gate NOT can be built using diode.
Reason (R): The output voltage and the input voltage of the diode have 180° phase difference.

Question 24.
Assertion (A): A transistor amplifier in common emitter configuration, has a low input impedance.
Reason (R): The base to emitter region is forward biased.

Question 25.
Assertion (A): NAND or NOR gates are called digital building blocks.
Reason (R): The repeated use of NAND or NOR gate can produce all the basic or completed gates.

Question 26.
Assertion (A): The resistivity of a semiconductor increases with temperature.
Reason (R): The atoms of a semiconductor vibrate with larger amplitudes of higher temperatures there by increasing its resistivity.

Question 27.
Assertion (A): The value of current through p-n junction in the adjoining figure will be 10 mA.
NEET Physics Chapter Wise Mock Test - Electronic devices 12
Reason (R): In the above figure, p-side is at higher potential than n-side.

Question 28.
The following configuration of gate is equivalent to figure
NEET Physics Chapter Wise Mock Test - Electronic devices 13
(a) NAND
(b) XOR
(c) OR
(d) None of these

Question 29.
In the figure, potential difference between A and B is
NEET Physics Chapter Wise Mock Test - Electronic devices 14
(a) zero
(b) 5V
(c) 10V
(d) 15V

Question 30.
The diode used in the circuit shown in the figure, has a constant voltage drop of 0.5 V at all currents and a maximum power rating of 100 mW. What should be the value of the resistor R, connected in series with the diode for obtaining maximum current?
NEET Physics Chapter Wise Mock Test - Electronic devices 15
(a) 1.5Ω
(b) 5Ω
(c) 6.67Ω
(d) 200Ω

Question 31.
In a common emitter transistor, the base current Ib = 2 μA, α=0.9, then Ic is equal to
(a) 18 μA
(b) 20 μA
(c) 22 μA
(d) 24 μA

Question 32.
An n-p-n transistor circuit is arranged as shown in figure. It is
NEET Physics Chapter Wise Mock Test - Electronic devices 16
(a) a common base amplifier circuit
(b) a common emitter amplifier circuit
(c) a common collector amplifier circuit
(d) Neither of the above

Question 33.
The junction diode in the following circuit requires a minimum current of 1 mA to be above the knee point (0.7 V) of its I-V characteristic curve. The voltage across the junction diode is independent of current above the knee point, if VB=4V, then the maximum value of R, so that the voltage is above knee point will be .
NEET Physics Chapter Wise Mock Test - Electronic devices 17
(a) 3.3 kΩ
(b) 4.0 kΩ
(c) 4.7 kΩ
(d) 6.6 kΩ

Question 34.
The circuit shown in the figure contains two diodes, each with a forward resistance of 30Ω and with infinite backward resistance. If the battery is 3 V, the current through the 50Ω resistance (in ampere) is
NEET Physics Chapter Wise Mock Test - Electronic devices 18
(a) zero
(b) 0.01
(c) 0.02
(d) 0.03

Question 35.
In the network shown, the current flowing through the battery of negligible internal resistance, is
NEET Physics Chapter Wise Mock Test - Electronic devices 19
(a) 0.10 A
(b) 0.15 A
(c) 0.20 A
(d) 0.30 A

Question 36.
The output Y of the logic circuit shown in figure, is best represented as
NEET Physics Chapter Wise Mock Test - Electronic devices 20

Question 37.
A p-n junction (D) shown in the figure can act as a rectifier. An alternating current source (V) is connected in the circuit. The current (I) in the resistor (R) can be shown by
NEET Physics Chapter Wise Mock Test - Electronic devices 21
NEET Physics Chapter Wise Mock Test - Electronic devices 22

Question 38.
In the circuit as shown in figure, A and B represent two inputs and C represents the
NEET Physics Chapter Wise Mock Test - Electronic devices 23
(a) OR gate
(b) NOR gate
(c) AND
(d) NAND gate

Question 39.
The ratio of electron and hole current in a semiconductor is 7/4 and the ratio of drift velocities of electrons and holes is 5/4, then ratio of concentrations of electrons and holes will be
(a) 5/7
(b) 7/5
(c) 25/49
(d) 49/25

Question 40.
In a junction diode, the direction of diffusion current is
(a) from n-region to p-region
(b) from p-region to n-region
(c) from n-region to p-region, if the junction is forward biased and vice versa, if it is reverse biased
(d) from p-region to n-region if the junction is forward biased and vice versa, if it is reversed biased

Question 41.
The direction of flow of current in the given diagram is
NEET Physics Chapter Wise Mock Test - Electronic devices 24
(a) zero
(b) 10-2 A
(c) 10A
(d) 0.025A

Answers:

NEET Physics Chapter Wise Mock Test - Electronic devices 25

Hints And Solutions:

NEET Physics Chapter Wise Mock Test - Electronic devices 26
NEET Physics Chapter Wise Mock Test - Electronic devices 27
NEET Physics Chapter Wise Mock Test - Electronic devices 28
NEET Physics Chapter Wise Mock Test - Electronic devices 29
NEET Physics Chapter Wise Mock Test - Electronic devices 30
NEET Physics Chapter Wise Mock Test - Electronic devices 31
NEET Physics Chapter Wise Mock Test - Electronic devices 32
NEET Physics Chapter Wise Mock Test - Electronic devices 34

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